← Back to shiwamsclass.com← Website
← CBSE Class 12 PYQ

Semiconductor Electronics

CBSE Class 12 · Physics · 24 past questions

  1. Q1 2026
    When the forward bias voltage in a semiconductor diode is changed from 0·8 V to 1·0 V, the forward current…
  2. Q2 2026
    The process named ‘minority carrier injection’ in a p-n junction diode occurs during…
  3. Q3 2026
    In an unbiased p-n junction, at equilibrium, which of the following statements is true ?
  4. Q4 2026
    Assertion (A) : On forward biasing a p-n junction diode, the height of the barrier potential increases.…
  5. Q5 2025
    Questions number 13 to 16 are Assertion (A) and Reason (R) type questions. Two statements are given — one…
  6. Q6 2025
    When the resistance measured between p and n ends of a p-n junction diode is high, it can act as a/an –
  7. Q7 2025
    For Questions 13 to 16, two statements are given – one labelled Assertion (A) and other labelled Reason (R).…
  8. Q8 2025
    The threshold voltage of a silicon diode is 0.7 V. It is operated at this point by connecting the diode in…
  9. Q9 2025
    When a p-n junction diode is forward biased
  10. Q10 2025
    Assertion (A) : We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically…
  11. Q11 2025
    A p-type Si semiconductor is made by doping an average of one dopant atom per $5 \times 10^7$ silicon atoms.…
  12. Q12 2024
    Si is doped with a pentavalent element. The energy required to set the additional electron free is about…
  13. Q13 2024
    Questions number 13 to 16 are Assertion (A) and Reason (R) type questions. Two statements are given — one…
  14. Q14 2024
    Suppose a pure Si crystal has $5 \times 10^{28}$ atoms $\text{m}^{-3}$. It is doped by 1 ppm concentration of…
  15. Q15 2024
    Ge is doped with As. Due to doping…
  16. Q16 2024
    When a p-n junction diode is subjected to reverse biasing…
  17. Q17 2023
    Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The…
  18. Q18 2023
    The formation of depletion region in a p-n junction diode is due to
  19. Q19 2023
    At a certain temperature in an intrinsic semiconductor, the electrons and holes concentration is…
  20. Q20 2023
    If a p-n junction diode is reverse biased…
  21. Q21 2023
    An ac source of voltage is connected in series with a p-n junction diode and a load resistor. The correct… (with a figure)
  22. Q22 2023
    When an intrinsic semiconductor is doped with a small amount of trivalent impurity, then…
  23. Q23 2023
    In the energy-band diagram of n-type Si, the gap between the bottom of the conduction band $E_C$ and the…
  24. Q24 2022
    Name the device which converts electrical energy into light energy. Write three advantages of the device.