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← CBSE Class 12 PYQ
Semiconductor Electronics
CBSE Class 12 · Physics · 24 past questions
Topic
Biasing and V-I characteristics
8
Intrinsic and extrinsic semiconductors
8
Energy bands in solids
3
p-n junction formation
3
Rectifiers and diode circuits
1
Special purpose diodes
1
Level
Easy
5
Moderate
3
Year
2026
0
2025
3
2024
3
2023
2
2022
0
8 of 24 ·
show all
Q5
2025
Questions number 13 to 16 are Assertion (A) and Reason (R) type questions. Two statements are given — one…
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Q10
2025
Assertion (A) : We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically…
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Q11
2025
A p-type Si semiconductor is made by doping an average of one dopant atom per $5 \times 10^7$ silicon atoms.…
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Q12
2024
Si is doped with a pentavalent element. The energy required to set the additional electron free is about…
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Q14
2024
Suppose a pure Si crystal has $5 \times 10^{28}$ atoms $\text{m}^{-3}$. It is doped by 1 ppm concentration of…
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Q15
2024
Ge is doped with As. Due to doping…
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Q19
2023
At a certain temperature in an intrinsic semiconductor, the electrons and holes concentration is…
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Q22
2023
When an intrinsic semiconductor is doped with a small amount of trivalent impurity, then…
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