← CBSE Class 12 PYQ

Semiconductor Electronics

CBSE Class 12 · Physics · 24 past questions

19 of 24 · show all

Q1 2026

When the forward bias voltage in a semiconductor diode is changed from 0·8 V to 1·0 V, the forward current…
Q2 2026

The process named ‘minority carrier injection’ in a p-n junction diode occurs during…
Q4 2026

Assertion (A) : On forward biasing a p-n junction diode, the height of the barrier potential increases.…
Q5 2025

Questions number 13 to 16 are Assertion (A) and Reason (R) type questions. Two statements are given — one…
Q6 2025

When the resistance measured between p and n ends of a p-n junction diode is high, it can act as a/an –
Q7 2025

For Questions 13 to 16, two statements are given – one labelled Assertion (A) and other labelled Reason (R).…
Q8 2025

The threshold voltage of a silicon diode is 0.7 V. It is operated at this point by connecting the diode in…
Q9 2025

When a p-n junction diode is forward biased
Q12 2024

Si is doped with a pentavalent element. The energy required to set the additional electron free is about…
Q15 2024

Ge is doped with As. Due to doping…
Q16 2024

When a p-n junction diode is subjected to reverse biasing…
Q17 2023

Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The…
Q18 2023

The formation of depletion region in a p-n junction diode is due to
Q19 2023

At a certain temperature in an intrinsic semiconductor, the electrons and holes concentration is…
Q20 2023

If a p-n junction diode is reverse biased…
Q21 2023

An ac source of voltage is connected in series with a p-n junction diode and a load resistor. The correct… (with a figure)
Q22 2023

When an intrinsic semiconductor is doped with a small amount of trivalent impurity, then…
Q23 2023

In the energy-band diagram of n-type Si, the gap between the bottom of the conduction band $E_C$ and the…
Q24 2022

Name the device which converts electrical energy into light energy. Write three advantages of the device.