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← CBSE Class 12 PYQ
Semiconductor Electronics
CBSE Class 12 · Physics · 24 past questions
Topic
Biasing and V-I characteristics
3
Intrinsic and extrinsic semiconductors
3
p-n junction formation
1
Energy bands in solids
0
Rectifiers and diode circuits
0
Special purpose diodes
0
Level
Easy
5
Moderate
2
Year
2026
4
2025
7
2024
5
2023
7
2022
1
7 of 24 ·
show all
Q5
2025
Questions number 13 to 16 are Assertion (A) and Reason (R) type questions. Two statements are given — one…
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Q6
2025
When the resistance measured between p and n ends of a p-n junction diode is high, it can act as a/an –
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Q7
2025
For Questions 13 to 16, two statements are given – one labelled Assertion (A) and other labelled Reason (R).…
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Q8
2025
The threshold voltage of a silicon diode is 0.7 V. It is operated at this point by connecting the diode in…
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Q9
2025
When a p-n junction diode is forward biased
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Q10
2025
Assertion (A) : We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically…
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Q11
2025
A p-type Si semiconductor is made by doping an average of one dopant atom per $5 \times 10^7$ silicon atoms.…
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